CMLM0574
Integrated MOSFET and Schottky Diode
in miniature SOT-563 package

October 12, 2010 - Central Semiconductor Corp. announces the introduction of the CMLM0574 Multi Discrete Module™ consisting of a single N-Channel Enhancement Mode MOSFET and a low V_F Schottky diode packaged in the space saving PICOmini™ SOT-563 surface mount case. This integrated device is optimal for space constrained applications where energy efficiency is a key requirement.

CMRD6263DO
Versatile Dual 70V, 15mA Schottky diodes
in the SOT-963 package

September 7, 2010 - Central Semiconductor Corp. announces the introduction of the CMRD6263DO dual isolated 70V, 15mA Schottky diodes packaged in the ultra miniature SOT-963 surface mount case. This device has an outstanding low V_F of 0.395V typical and a fast switching speed of less than 5.0ns.

CEDM7001 & CEDM8001
Space saving 20V, 100mA N-Channel and P-Channel MOSFETs 
in the ultra miniature SOT-883L package

August 10, 2010 - The new Central Semiconductor CEDM7001 (N-Channel) and CEDM8001 (P-Channel) are 20V, 100mA MOSFETs packaged in the ultra miniature, low profile SOT-883L surface mount case. These devices have a rated continuous drain current of 100mA and a peak drain current of 200mA (tp<10µs). Both devices have an outstanding low minimum gate threshold voltage of 0.6V and r_DS(ON) of 3.0Ω (CEDM7001) and 8.0Ω (CEDM8001).

CMRSH-4DO
Versatile Dual 40V, 200mA Schottky diodes
in the SOT-963 package

July 21, 2010 - Central Semiconductor Corp. announces the introduction of the CMRSH-4DO dual isolated 40V, 200mA Schottky diodes packaged in the ultra miniature SOT-963 surface mount case. This device has an outstanding low V_F of 0.35V and a fast switching speed of 5.0ns.

CMPS5064
Space saving 400 Volt SCR
in the SOT-23 package

June 2, 2010 - Central Semiconductor Corp. announces the release of the CMPS5064 Silicon Controlled Rectifier (SCR) due to high customer demand. This device packaged in SOT-23 is a 400V, 0.8A SCR designed for applications with space constraints requiring a fast switching high voltage device.

CMRDM3575
Dual Complementary
N-Channel and P-Channel MOSFETs

April 21, 2010 - The new Central Semiconductor Corp. dual complementary CMRDM3575 consists of a 20V, 160mA N-Channel and a 20V, 140mA P-Channel MOSFET. Packaged in the ultra miniature SOT-963 surface mount case, this new device is an integrated solution designed for circuits requiring N-Channel and P-Channel MOSFETs with comparable electrical characteristics.

CMLM8205
Multi Discrete Module
P-Channel MOSFET & Schottky Diode

February 25, 2010 - The Central Semiconductor CMLM8205 Multi Discrete Module in the SOT-563 surface mount package features a 50V, 280mA P-channel enhancement mode MOSFET and an isolated 40V, 500mA low VF Schottky diode. The MOSFET has a minimum gate threshold of 1.0V and the Schottky diode has a low forward voltage drop of 0.35V at 100mA.

CBRHDSH2-100
2A, 100V
Schottky Bridge Rectifier

January 26, 2010 - The Central Semiconductor announces the release of the CBRHDSH2-100 Schottky Bridge Rectifier packaged in the HD DIP case. This new energy efficient device has a low reverse leakage current of 0.7uA and addresses the need for a space saving 2A, 100V full wave bridge rectifier essential for today’s power management, solid state lighting, and power over ethernet applications.